Scaling possibility of PZT capacitors for high density and low-voltage NVFRAM application

Integrated Ferroelectrics

Volumn 17, Issue 1-4, 1997, Pages 81-88

  Kobayashi, S ^a   Tanabe, N ^a   Maejima, Y ^a   Hayashi, Y ^a   Kunio, T ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Ferroelectric capacitors; Ferroelectric memory

Indexed keywords

CERAMIC CAPACITORS; LEAD COMPOUNDS; NONVOLATILE STORAGE; POLARIZATION; RANDOM ACCESS STORAGE;

LEAD ZIRCONIUM TITANATE; NONVOLATILE FERROELECTRIC RANDOM ACCESS STORAGE; SCALING LIMIT;

FERROELECTRIC DEVICES;

EID: 0031337303     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584589708012983     Document Type: Article

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