Changes in preferred orientation of Pt thin films deposited by dc magnetron sputtering using Ar/O2 gas mixtures

Journal of Materials Research

Volumn 14, Issue 4, 1999, Pages 1255-1260

  Kim, Min Hong ^a   Park, Tae Soon ^a,c   Yoon, Euijoon ^a   Lee, Dong Su ^a,b   Park, Dong Yeon ^a,b   Woo, Hyun Jung ^a,b   Chun, Dong Il ^b   Ha, Jowoong ^a,b  

^a Seoul National University   (South Korea)

^b Advanced Materials Area   (South Korea)

^c Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CRYSTAL ORIENTATION; ELECTRIC CONDUCTIVITY; GRAIN BOUNDARIES; MAGNETRON SPUTTERING; OXYGEN; PERMITTIVITY; PLATINUM; SILICA; SILICON; SUBSTRATES; TENSILE STRESS;

DIELECTRIC CONSTANT MAGNETRON SPUTTERING; FILM RESISTIVITY; STRAIN ENERGY;

THIN FILMS;

EID: 0032634994     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1999.0171     Document Type: Article

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