Hot-electron three-terminal devices based on magnetic tunnel junction stacks

Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 14, 2002, Pages 1444111-1444117

  Hehn, M ^a   Montaigne, F ^a   Schuhl, A ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATION; ARTICLE; CALCULATION; DEVICE; DIODE; ELECTRON; ELECTRON TRANSPORT; MAGNETIC FIELD; MAGNETISM; MATHEMATICAL MODEL; MEASUREMENT;

EID: 0036813120     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.66.144411     Document Type: Article

References (40)

1. J.S. Moodera, L.R. Kinder, TM. Wong, and R. Meservey, Phys. Rev. Lett. 74, 3273 (1995).
2. S.A. Wolf, J. Supercond. 13, 195 (2000).
3. C.H. Shang, J. Nowak, R. Jansen, and J.S. Moodera, Phys. Rev. B 58, R2917 (1998); R. Jansen and J.S. Moodera, J. Appl. Phys. 83, 6682 (1998); R.C. Sousa, J.J. Sun, V. Soares, P.P. Freitas, A. Kling, M.F. da Silva, and J.C. Soares, Appl. Phys. Lett. 73, 3288 (1998).
4. C.H. Shang, J. Nowak, R. Jansen, and J.S. Moodera, Phys. Rev. B 58, R2917 (1998); R. Jansen and J.S. Moodera, J. Appl. Phys. 83, 6682 (1998); R.C. Sousa, J.J. Sun, V. Soares, P.P. Freitas, A. Kling, M.F. da Silva, and J.C. Soares, Appl. Phys. Lett. 73, 3288 (1998).
5. C.H. Shang, J. Nowak, R. Jansen, and J.S. Moodera, Phys. Rev. B 58, R2917 (1998); R. Jansen and J.S. Moodera, J. Appl. Phys. 83, 6682 (1998); R.C. Sousa, J.J. Sun, V. Soares, P.P. Freitas, A. Kling, M.F. da Silva, and J.C. Soares, Appl. Phys. Lett. 73, 3288 (1998).
6. M. Hehn, O. Lenoble, D. Lacour, C. Féry, M. Piécuch, C. Tiusan, and K. Ounadjela, Phys. Rev. B 61, 11 643 (2000).
7. R.E. Dunin-Borkowski, M.R. McCartney, D.J. Smith, S. Gider, B.U. Runge, and S.S. Parkin, J. Appl. Phys. 85, 4815 (1999); C. Tiusan, T. Dimopoulos, M. Hehn, V. Da Costa, Y. Henry, H.A.M. van den Berg, and K. Ounadjela, Phys. Rev. B 61, 580 (2000).
8. R.E. Dunin-Borkowski, M.R. McCartney, D.J. Smith, S. Gider, B.U. Runge, and S.S. Parkin, J. Appl. Phys. 85, 4815 (1999); C. Tiusan, T. Dimopoulos, M. Hehn, V. Da Costa, Y. Henry, H.A.M. van den Berg, and K. Ounadjela, Phys. Rev. B 61, 580 (2000).
9. M. Jullière, Phys. Lett. 54A, 225 (1975); J.C. Slonczewski, Phys. Rev. B 39, 6995 (1989); I.I. Mazin, Phys. Rev. Lett. 83, 1427 (1999).
10. M. Jullière, Phys. Lett. 54A, 225 (1975); J.C. Slonczewski, Phys. Rev. B 39, 6995 (1989); I.I. Mazin, Phys. Rev. Lett. 83, 1427 (1999).
11. M. Jullière, Phys. Lett. 54A, 225 (1975); J.C. Slonczewski, Phys. Rev. B 39, 6995 (1989); I.I. Mazin, Phys. Rev. Lett. 83, 1427 (1999).
12. F. Montaigne, M. Hehn, and A. Schuhl, Phys. Rev. B 64, 144402 (2001).
13. I.I. Oleinik, E.Y. Tsymbal, and D.G. Pettifor, Phys. Rev. B 62, 3952 (2000); J.M. MacLaren, X.G. Zhang, W.H. Butler, and X. Wang, ibid. 59, 5470 (1999).
14. I.I. Oleinik, E.Y. Tsymbal, and D.G. Pettifor, Phys. Rev. B 62, 3952 (2000); J.M. MacLaren, X.G. Zhang, W.H. Butler, and X. Wang, ibid. 59, 5470 (1999).
15. C.A. Mead, J. Appl. Phys. 32, 646 (1961).
16. F. Montaigne, J. Nassar, A. Vaures, F. Nguyen Van Dau, F. Petroff, A. Schuhl, and A. Fert, Appl. Phys. Lett. 73, 2829 (1998).
17. S. Muratake, M. Watanabe, T. Suemasu, and M. Asada, Electron. Lett. 28, 1002 (1992); W. Saitoh, T. Suemasu, Y. Kohno, M. Watanabe, and M. Asada, Jpn. J. Appl. Phys., Part 2 34, L1254 (1995).
18. S. Muratake, M. Watanabe, T. Suemasu, and M. Asada, Electron. Lett. 28, 1002 (1992); W. Saitoh, T. Suemasu, Y. Kohno, M. Watanabe, and M. Asada, Jpn. J. Appl. Phys., Part 2 34, L1254 (1995).
19. M. Heiblum, D.C. Thomas, C.M. Knoedler, and M.I. Nathan, Appl. Phys. Lett. 10, 1105 (1985).
20. D.J. Monsma, R. Vlutters, and J.C. Lodder, Science 281, 407 (1998).
21. S. Stein, R. Schmitz, and H. Kohlstedt, Solid State Commun. 117, 599 (2001).
22. A. Filipe, H.-J. Drouhin, G. Lampel, Y. Lassailly, J. Nagle, J. Peretti, V.I. Safarov, and A. Schuhl, Phys. Rev. Lett. 80, 2425 (1998).
23. D. Oberli, R. Burgermeister, S. Riesen, W. Weber, and H.C. Siegmann, Phys. Rev. Lett. 81, 4228 (1998).
24. J. Hong and D.L. Mills, Phys. Rev. B 59, 13840 (1999).
25. W.H. Rippard and R.A. Buhrman, Phys. Rev. Lett. 84, 971 (2000).
26. R. Vlutters, O.M.J. van 't Erve, S.D. Kim, R. Jansen, and J.C. Lodder, Phys. Rev. Lett. 88, 027202 (2002).
27. S. Zhang, J. Appl. Phys. 87, 5218 (2000).
28. A. Filipe, Ph.D. thesis, Ecole Polytechnique, 1997.
29. R. Tsu and L. Esaki, Appl. Phys. Lett. 22, 562 (1973).
30. S. Zhang, P.M. Levy, A.C. Marley, and S.S.P. Parkin, Phys. Rev. Lett. 79, 3744 (1997).
31. J.M. De Teresa, A. Barthélémy, A. Fert, J.P. Contour, R. Lyonnet, F. Montaigne, P. Seneor, and A. Vaures, Phys. Rev. Lett. 82, 4288 (1999).
32. A.H. Davis and J.M. MacLaren, J. Appl. Phys. 87, 5224 (2000).
33. P. Rottländer, M. Hehn, O. Lenoble, and A. Schuhl, Appl. Phys. Lett. 78, 3274 (2001).
34. R. Vlutters, R. Jansen, O.M.J. van 't Erve, S.D. Kim, and J.C. Lodder, J. Appl. Phys. 89, 7305 (2001).
35. W. J. Gallagher, J. H. Kaufman, S. S. P. Parkin, and R. E. Scheuerlein, United States Patent No. 5,640,343, June 17, 1997.
36. M. Chshiev, D. Stoeffler, A. Vedyayev, and K. Ounadjela, Europhys. Lett. 58, 257 (2002).
37. C. Tiusan, M. Chshiev, A. Iovan, V. da Costa, D. Stoeffler, T. Dimopoulos, and K. Ounadjela, Appl. Phys. Lett. 79, 4231 (2001).
38. W. Oepts, H.J. Verhagen, W.J.M. de Jonge, and R. Coehoorn, Appl. Phys. Lett. 73, 2363 (1998).
39. 'The transfer efficiency of hot electrons with monochromatic energy across a 1. 9-nm-thick metal (CoSi2) epitaxial layer was estimated to be more than 0. 96 from negative differential resistance characteristics of a metal (CoSi2)/insulator(CaF2) quantum interference transistor. Such a high value of transfer efficiency may be due to the very thin single-crystalline metallic layer. From this transfer efficiency, mean free path of hot electrons is estimated to be more than 50 nm. WEB site http://www.pe.titech.ac.jp/Suematsu/ResearchReview/95/act295.htm. T. Suemasu, Y. Kohno, W. Saitoh, M. Watanabe, and M. Asada, IEEE Trans. Electron Devices 42, 2203 (1995).
40. R. Jansen, S.D. Kim, R. Vlutters, O.M.J. van 't Erve, and J.C. Lodder, Phys. Rev. Lett. 87, 166601 (2001).