Angle control in high-current ion implanters

Solid State Technology

Volumn 45, Issue 10, 2002, Pages 39-40+42+44

  Rubin, Leonard ^a  

^a AXCELIS TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTROSTATICS; ION BEAMS; MAGNETIC PROPERTIES; PROCESS CONTROL; PRODUCTIVITY; SCANNING; SILICON WAFERS; STATISTICAL METHODS; SUBSTRATES;

ANALYZER MAGNET; BEAM STEERING; ELECTRIC SCANNING; ION IMPLANTER; MAGNETIC SCANNING; MECHANICAL SCANNING; MULTIWAFER IMPLANTER;

ION IMPLANTATION;

EID: 0036807087     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (6)

1. A.M. Ray, J.P. Dykstra, "Beam Incidence Variations in Spinning Disk Ion Implanters," Nucl. Inst. Meth. Phys. Res., Vol. B55, p. 488, 1991.
2. M.A. Jones et al., "Across-wafer Channeling Variations on Batch Implanters: A Graphical Technique to Analyze Spinning Disk Systems," Proc. XI Int'l. Conf. on Ion Implantation Technology, 264, 1996.
3. C. Jasper et al., "Electrical Comparison of a Parallel Beam and Batch Implanters," Proc. of the XIII Int'l. Conf. on Ion Implantation Technology, p. 376, 2000.
4. R.B. Simonton et al., "Channeling Effects in Ion Implantation into Silicon," in J. Ziegler, ed., Ion Implantation Science and Technology, p. 303, Ion Implantation Technology Co., Yorktown Heights, NY, 2000.
5. S.R. Walther et al., "Dopant Channeling as a Function of Implant Angle for Low Energy Applications," Proc. of the XII Int'l. Conf. on Ion Implantation Technology, p. 126, 1998.
6. C. Sudhama et al., "Robust Ion-Implantation Process Design Through Statistical Analysis," Proc. of the 3rd Intl. Conf. on Modeling and Simulation of Microsystems, San Diego, March 27-29, 2000.