Low temperature transport properties of Ru2Si3 single crystals

Materials Research Society Symposium - Proceedings

Volumn 402, Issue , 1996, Pages 581-586

  Gottlieb, U ^a   Madar, R ^a   Laborde, O ^a  

^a Domaine Universitaire   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY MEASUREMENT; GRINDING (MACHINING); HALL EFFECT; LOW TEMPERATURE PROPERTIES; MAGNETIC VARIABLES MEASUREMENT; SINGLE CRYSTALS; TRANSPORT PROPERTIES; X RAY DIFFRACTION;

CRYSTALLOGRAPHIC AXIS; ELECTRON-ELECTRON INTERACTIONS; HALL COEFFICIENT; LOW TEMPERATURE TRANSPORT PROPERTIES; MAGNETO RESISTANCE; METAL INSULATOR TRANSITION; RUTHENIUM SILICIDES; SCALING LAW; SEMICONDUCTING SILICIDES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0029736582     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (19)