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Volumn 46, Issue 10, 2002, Pages 1651-1657

The problems originating from the grain boundaries in dielectric storage capacitors

Author keywords

Degradation; Ferroelectric random access memory; Grain boundary; Pb(Zr,Ti)O3; Selectively nucleated lateral crystallization; Thin film

Indexed keywords

CAPACITORS; CRYSTALLIZATION; DIELECTRIC MATERIALS; ELECTRODES; FATIGUE OF MATERIALS; GRAIN BOUNDARIES; LEAKAGE CURRENTS; POLARIZATION;

EID: 0036779155     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00120-X     Document Type: Conference Paper
Times cited : (11)

References (20)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.