|
Volumn 46, Issue 10, 2002, Pages 1651-1657
|
The problems originating from the grain boundaries in dielectric storage capacitors
a a |
Author keywords
Degradation; Ferroelectric random access memory; Grain boundary; Pb(Zr,Ti)O3; Selectively nucleated lateral crystallization; Thin film
|
Indexed keywords
CAPACITORS;
CRYSTALLIZATION;
DIELECTRIC MATERIALS;
ELECTRODES;
FATIGUE OF MATERIALS;
GRAIN BOUNDARIES;
LEAKAGE CURRENTS;
POLARIZATION;
DIELECTRIC STORAGE CAPACITORS;
THIN FILMS;
|
EID: 0036779155
PISSN: 00381101
EISSN: None
Source Type: Journal
DOI: 10.1016/S0038-1101(02)00120-X Document Type: Conference Paper |
Times cited : (11)
|
References (20)
|