Introduction of selectively nucleated lateral crystallization of lead zirconate titanate thin films for fabrication of high-performance ferroelectric random access memory

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 11, 2000, Pages 6343-6347

  Lee, Jang Sik ^a   Joo, Seung Ki ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; CURRENT DENSITY; ELECTRIC BREAKDOWN OF SOLIDS; FERROELECTRIC DEVICES; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; LEAD COMPOUNDS; LEAKAGE CURRENTS; NUCLEATION; POLARIZATION; RANDOM ACCESS STORAGE; THIN FILMS;

LEAD ZIRCONATE TITANATE; SELECTIVELY NUCLEATED LATERAL CRYSTALLIZATION (SNLC);

DIELECTRIC FILMS;

EID: 0034315966     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.6343     Document Type: Article

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