Doping of a-SiCX:H films including μc-Si:H by hot-wire CVD and their application as a wide gap window for heterojunction solar cells

Solar Energy Materials and Solar Cells

Volumn 74, Issue 1-4, 2002, Pages 379-385

  Itoh, T ^a   Fukunaga, K ^a   Katoh, Y ^a   Fujiwara, T ^a   Nonomura, S ^a  

^a GIFU UNIVERSITY   (Japan)

Author keywords

c Si:H; A SiCx:H alloy films; B doping; Hot wire CVD; Hydrogen radical; Wide gap widow layer material of solar cell

Indexed keywords

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; CRYSTAL IMPURITIES; CRYSTALLINE MATERIALS; HETEROJUNCTIONS; HYDROGENATION; PHOTOCONDUCTIVITY; SEMICONDUCTOR DOPING; SILICON CARBIDE; SILICON SOLAR CELLS;

DARK CONDUCTIVITIES;

AMORPHOUS FILMS;

EID: 0036778645     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(02)00129-0     Document Type: Article

References (7)

1. Physics and application of amorphous silicon carbide
2. Optoelectronics and photovoltaic applications of microcrystalline SiC
3. Preparation of silicon-carbon alloy films by hot-wire CVD and their properties
4. Hydrogen dilution effect on the crystallinity of silicon films grow by hot wire cell method
5. Formation kinetics and control of microcrystallite in μc-Si:H from glow discharge plasma
6. Cracking efficiency of hydrogen with tungsten filament in molecular beam epitaxy
7. Bonding structures in highly photoconductive a-SiC:H films deposited by hybrid-plasma chemical vapor deposition