Bonding structures in highly photoconductive a-SiC:H films deposited by hybrid-plasma chemical vapor deposition

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 1, 1996, Pages 577-581

  Fujii, Tadashi ^a   Yoshimoto, Masahiro ^a   Fuyuki, Takashi ^a   Matsunami, Hiroyuki ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; ELECTRON ENERGY LEVELS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGENATION; PHOTOCONDUCTING MATERIALS; PHOTOCONDUCTIVITY; PLASMA APPLICATIONS; PLASMAS; SILICON CARBIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

AMORPHOUS SILICON CARBIDE FILMS; BONDING STRUCTURES; HIGH PERFORMANCE PHOTOELECTRIC PROPERTIES; HYBRID PLASMA CHEMICAL VAPOR DEPOSITION; MICROWAVE PLASMA;

AMORPHOUS FILMS;

EID: 17144459540     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(96)80022-6     Document Type: Article

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