Impact of material/process interactions on the properties of a porous CVD-O3 low-k dielectric film

Microelectronic Engineering

Volumn 64, Issue 1-4, 2002, Pages 367-374

  Travaly, Y ^a   Eyckens, B ^a   Carbonel, L ^a   Rothschild, A ^a   Le, Q T ^a   Brongersma, S H ^a   Ciofi, I ^a   Struyf, H ^a   Furukawa, Y ^b   Stucchi, M ^a   Schaekers, M ^a   Bender, H ^a   Rosseel, E ^a   Vanhaelemeersch, S ^a   Maex, K ^a   Gaillard, F ^c   Van Autryve, L ^c   Rabinzohn, P ^c  

^a IMEC   (Belgium)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c Applied Materials France   (France)

Author keywords

Chemical vapor deposition (CVD); Cure; K Value; Low k; Plasma; Pore sealing

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; LOW TEMPERATURE EFFECTS; OZONE; PERMITTIVITY; PLASMAS; POROUS MATERIALS;

RESIST STRIPPING PLASMAS;

DIELECTRIC FILMS;

EID: 0036776412     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00810-9     Document Type: Conference Paper

References (4)