650-mW single lateral mode power from tapered and flared buried ridge laser

IEEE Photonics Technology Letters

Volumn 14, Issue 9, 2002, Pages 1237-1239

  Swint, R B ^a,b   Huber, A E ^a,b   Yeoh, T S ^a,b   Woo, C Y ^a,b   Coleman, J J ^a,b   Faircloth, B O ^c   Zediker, M S ^c  

^a IEEE   (United States)

^b University of Illinois at Urbana Champaign   (United States)

^c Nuvonyx Inc   (United States)

Author keywords

High power; Selective area epitaxy; Single lateral mode

Indexed keywords

SELECTIVE AREA EPITAXY;

EPITAXIAL GROWTH; HIGH POWER LASERS; LASER MODES; OPTICAL DESIGN; OPTICAL WAVEGUIDES; SEMICONDUCTING GALLIUM ARSENIDE;

SEMICONDUCTOR LASERS;

EID: 0036743797     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2002.801072     Document Type: Article

References (10)

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