Novel design for high-power single-lateral-mode lasers

IEEE Photonics Technology Letters

Volumn 13, Issue 10, 2001, Pages 1064-1066

  Huber, A E ^a,b   Yeoh, T S ^a,b   Swint, R B ^a,b   Woo, C Y ^b   Lee, K E ^b   Roh, S D ^b   Coleman, J J ^a,b   Faircloth, B O ^c   Zediker, M S ^c  

^a IEEE   (United States)

^b University of Illinois at Urbana Champaign   (United States)

^c With Nuvonyx Inc   (United States)

Author keywords

High power; Single lateral mode

Indexed keywords

SELECTIVE AREA EPITAXY;

EPITAXIAL GROWTH; HIGH POWER LASERS; LASER MODES; LASER PULSES; SEMICONDUCTING GALLIUM COMPOUNDS;

SEMICONDUCTOR LASERS;

EID: 0035472865     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.950736     Document Type: Article

References (10)

1. Design of a 1 W, single filament laser diode
2. 8 W continuous wave front-facet power from broad-waveguide Al-free 980 nm diode lasers
3. High-power (>10 W) continuous-wave operation from 100 μm aperture 0.97 μm emitting Al-free diode lasers
4. The impact of LOC structures on 670-nm (Al)GaInP high-power lasers
5. Characteristics and reliability of high-power InGaAs/AlGaAs laser diodes with decoupled confinement heterostructure
6. Highly reliable and stable-lateral-mode operation of high-power 0.98-μm InGaAs-InGaAsp lasers with an exponential-shaped flared stripe
7. Progress in InGaAs-GaAs selective-area MOCVD toward photonic integrated circuits
8. InGaAIP visible-light laser diodes
9. Astigmatism in ridge-stripe InGaAIP laser diodes