The charge storage of the nc-Si layer

Chinese Physics

Volumn 11, Issue 9, 2002, Pages 944-947

  Dai, Min ^a   Zhang, Lin ^a   Bao, Yun ^a   Shi, Jian Jun ^a   Chen, Kai ^a   Li, Wei ^a   Huang, Xin Fan ^a   Chen, Kun Ji ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

C V characteristics; Charge storage; Nc Si; Thermal annealing

Indexed keywords

EID: 0036735993     PISSN: 10091963     EISSN: None     Source Type: Journal    
DOI: 10.1088/1009-1963/11/9/317     Document Type: Article

References (9)

1. Gu X F, Qin H, Lu H, Chen K J and Huang X F 1996 J. Non-Cryst. Solids 227-230 1168
2. Qin H, Gu X F, Lu H, Liu J H, Huang X F and Chen K J 1999 Solid State Commun. 111 171
3. Ma S Y, Qin G G, You L P and Wang Y Y 2001 Acta Phys. Sin. 50 1580 (in Chinese)
4. Wang L, Li J, Huang X F, Xu J, Li W and Chen K J 2000 Appl. Surf. Sci. 165 85
5. Choi S and Ellima R G 1999 Appl. Phys. Lett. 75 968
6. Tsybeskov L, Grom G F and Megnea N 2000 Mater. Sci. Eng. B 69-70 303
7. Baron T, Gentile P and Megnea N 2001 Appl. Phys. Lett. 79 1175
8. Ishikawo Y, Kosugi M and Kumezawa M 2000 Thin Solid Films 369 69
9. Dons E M and Skowronski C S 1998 Appl. Phys. Lett. 73 2712