Observation of Coulomb-blockade in a field-effect transistor with silicon nanocrystal floating gate at room temperature

Solid State Communications

Volumn 111, Issue 3, 1999, Pages 171-174

  Qin, H ^a   Gu, X ^a   Lu, H ^a   Liu, J ^a   Huang, X ^a   Chen, K ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC CURRENTS; ELECTRON TUNNELING; GATES (TRANSISTOR); HEAT TREATMENT; NANOSTRUCTURED MATERIALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON;

COULOMB-BLOCKADE EFFECT; ELECTRON-ELECTRON INTERACTIONS;

MOSFET DEVICES;

EID: 0032677973     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(99)00177-5     Document Type: Article

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