A 23.8-GHz SOI CMOS tuned amplifier

IEEE Transactions on Microwave Theory and Techniques

Volumn 50, Issue 9, 2002, Pages 2193-2196

  Floyd, Brian A ^a,b   Shi, Leathen ^b   Taur, Yuan ^c   Lagnado, Isaac ^d   O, Kenneth K ^a  

^a University of Florida   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d Naval Command   (United States)

Author keywords

CMOS; K band; Low noise amplifier; Negative resistance; Silicon on insulator; SOI; Spiral inductor; Tuned amplifier

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC INDUCTORS; ELECTRIC POWER SUPPLIES TO APPARATUS; MOS CAPACITORS; NEGATIVE RESISTANCE; SIGNAL NOISE MEASUREMENT; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS;

LOW NOISE AMPLIFIER; TUNED AMPLIFIER;

AMPLIFIERS (ELECTRONIC);

EID: 0036733211     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2002.802334     Document Type: Article

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