SOI and bulk CMOS frequency dividers operating above 15 GHz

Electronics Letters

Volumn 37, Issue 10, 2001, Pages 617-618

  Floyd, B A ^a   Shi, L ^a   Taur, Y ^a   Lagnado, I ^a   O, K K ^a  

^a University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CMOS INTEGRATED CIRCUITS; ELECTRIC NETWORK TOPOLOGY; ELECTRIC POWER SUPPLIES TO APPARATUS; FLIP FLOP CIRCUITS; GATES (TRANSISTOR); LEAKAGE CURRENTS; MOSFET DEVICES; SCHEMATIC DIAGRAMS; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

FLOATING BODY TRANSISTORS; OPERATING FREQUENCY; POWER CONSUMPTION; SYNCHRONOUS DIVIDER;

FREQUENCY DIVIDING CIRCUITS;

EID: 0035837236     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010446     Document Type: Article

References (7)

1. 82GHz dynamic frequency divider in 5.5 ps ECL SiGE HBTs
2. A 26.5 GHz silicon MOSFET 2:1 dynamic frequency divider
3. A 1.8V, 3mW, 16.8GHz frequency divider in 0.25μm CMOS
4. High-speed CMOS circuit technique
5. A divide-by-128/129 dual modulus prescaler using a 0.8μm CMOS process
6. 2) latch and its application in a dual-modulus prescaler
7. Low-voltage transient bipolar effect induced by dynamic floating-body charging in PD/SOI MOSFETs