Reduction of the tensile stress in CoSi2 films by pre-deposition carbon ion implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 194, Issue 3, 2002, Pages 289-296

  Liu, J F ^a   Feng, J Y ^a   Li, W Z ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

CoSi2; Implantation; Stress; Thomas Fermi Dirac model

Indexed keywords

CARBON; COBALT COMPOUNDS; DEPOSITION; DOSIMETRY; ION IMPLANTATION; MATHEMATICAL MODELS; POSITIVE IONS; RAPID THERMAL ANNEALING; SILICON; SOLIDS; SUBSTRATES; TENSILE STRESS;

INTRINSIC STRESSES;

THIN FILMS;

EID: 0036723447     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(02)00780-2     Document Type: Article

References (27)

1. Silicide thin films-fabrication, properties and application