Stress in silicon due to the formation of self aligned poly-CoSi2 lines studied by micron-raman spectroscopy

Materials Research Society Symposium - Proceedings

Volumn 402, Issue , 1996, Pages 251-256

  Howard, D J ^a   De Wolf, I ^a   Bender, H ^a   Maex, K ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COBALT COMPOUNDS; MATHEMATICAL MODELS; MORPHOLOGY; POLYCRYSTALLINE MATERIALS; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; STRESSES; TRANSMISSION ELECTRON MICROSCOPY;

COBALT DISILICIDE; MECHANICAL STRESS; MICRO RAMAN SPECTROSCOPY; MICROGRAPHS; RAMAN FREQUENCY SHIFT;

SEMICONDUCTING SILICON;

EID: 0029735343     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)