Investigations of the development rate of irradiated pmma microstructures in deep x-ray lithography

Microelectronic Engineering

Volumn 63, Issue 4, 2002, Pages 319-328

  Meyer, Pascal ^a   El Kholi, A ^a   Schulz, J ^a  

^a KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

Author keywords

Dip development; GG developer; LIGA process; Megasonic supported development; Microstructure; Non crosslinked PMMA

Indexed keywords

ASPECT RATIO; CROSSLINKING; IRRADIATION; MICROSTRUCTURE; POLYMETHYL METHACRYLATES; X RAY LITHOGRAPHY;

NON-CROSSLINKED MICROSTRUCTURE;

PHOTORESISTS;

EID: 0036722932     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00547-6     Document Type: Article

References (18)

1. LIGA technology today and its industrial applications
2. Influence of developer temperature and resist material on the structure quality in deep X-ray lithography
3. Characterisation of defects in very high deep-etch X-ray lithography microstructures
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5. New strategies for high aspect ratio microstructure
6. Low energy X-ray interaction coefficients, photoabsorption, scattering reflection
7. PMMA development studies using various synchrotron sources and exposure conditions
8. The influence of feature sidewall tolerance on minimum absorber thickness for LIGA X-ray masks
9. Development behaviour of irradiated microstructures
10. Study of the development behaviour of irradiated foils and microstructure
11. Resist dissolution rate and inclined-wall structures in deep X-ray lithography
12. Developer characteristics of poly(methyl methacrylate) electron resist