Low-power 1:16 DEMUX and one-chip CDR with 1:4 DEMUX using InP-InGaAs heterojunction bipolar transistors

IEEE Journal of Solid-State Circuits

Volumn 37, Issue 9, 2002, Pages 1146-1151

  Ishii, Kiyoshi ^a,b   Nosaka, Hideyuki ^a,b   Nakajima, Hiroki ^a,b   Kurishima, Kenji ^a,b   Ida, Minoru ^a,b   Watanabe, Noriyuki ^a,b   Yamane, Yasurou ^a,b   Sano, Eiichi ^a,c   Enoki, Takatomo ^a,b  

^a IEEE   (Japan)

^b NTT CORPORATION   (Japan)

^c HOKKAIDO UNIVERSITY   (Japan)

Author keywords

CDR; Demultiplexer; HBT; InP; Optical communications; PLL

Indexed keywords

CLOCK RECOVERY; DATA RECOVERY; DEMULTIPLEXER INTEGRATED CIRCUIT;

DEMULTIPLEXING; INTEGRATED CIRCUIT MANUFACTURE; INTEGRATED OPTOELECTRONICS; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL COMMUNICATION; PHASE LOCKED LOOPS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; TIMING CIRCUITS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036714317     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2002.801190     Document Type: Conference Paper

References (10)

1. A low-power 72.8-GHz static frequency divider implemented in AlInAs/InGaAs HBT IC technology
2. Advanced InP/InGaAs HBTs: Technology for low-power lightwave communication circuit applications
3. Silicon bipolar 1:16-demultiplexer for 10-Gb/s fiber-optic communication system
4. A fully integrated SiGe receiver IC for 10-Gb/s data rate
5. A 10-Gb/s 16:1 multiplexer and 10-GHz clock synthesizer in 0.25-m SiGe BiCMOS
6. Performance and stability of MOVPE-grown carbon-doped InP/InGaAs HBTs dehydrogenated by an anneal after emitter mesa formation
7. High-speed, low-power lightwave communication ICs using InP/InGaAs double-heterojunction bipolar transistors
8. 3.5-Gb/s × 4-ch Si bipolar LSIs for optical interconnections
9. Low-power-consumption 10-Gbps GaAs 8:1 multiplexer/1:8 demultiplexer
10. A 10-Gb/s SiGe bipolar framer/demultiplexer for SDH systems