1.3 μm InGaAsP/InP capped mesa buried heterostructure laser with an undoped cladding layer in base epitaxial growth

Journal of Applied Physics

Volumn 83, Issue 8, 1998, Pages 4540-4541

  Swaminathan, V ^a   Reynolds Jr , C L ^a   Geva, M ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005267382     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367316     Document Type: Article

References (9)

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