Heavy ion irradiation on silicon strip sensors for GLAST

IEEE Transactions on Nuclear Science

Volumn 49 I, Issue 4, 2002, Pages 1756-1762

  Yoshida, S ^b   Yamanaka, K ^b   Ohsugi, T ^b   Masuda, H ^b   Mizuno, T ^b   Fukazawa, Y ^b   Iwata, Y ^c   Murakami, T ^c   Sadrozinski, H F W ^a,d   Yamamura, K ^e   Yamamoto, K ^e   Sato, K ^e  

^a IEEE

^b HIROSHIMA UNIVERSITY   (Japan)

^c NATIONAL INSTITUTE OF RADIOLOGICAL SCIENCES   (Japan)

^d UNIVERSITY OF CALIFORNIA SANTA CRUZ   (United States)

^e CENTRAL RESEARCH LABORATORY   (Japan)

Author keywords

Crystal orientation; Heavy ion; Radiation damage; Silicon strip detector (SSD); Single event effects (SEE)

Indexed keywords

COSMIC RAYS; CRYSTAL ORIENTATION; HEAVY IONS; IRRADIATION; RADIATION DAMAGE; SILICON;

SILICON STRIP SENSORS;

PARTICLE DETECTORS;

EID: 0036703255     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2002.801481     Document Type: Article

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