Effects of bulk and surface conductivity on the performance of CdZnTe pixel detectors

IEEE Transactions on Nuclear Science

Volumn 49 I, Issue 4, 2002, Pages 1941-1949

  Bolotnikov, Aleksey E ^a   Chen, C M Hubert ^a   Cook, Walter R ^a   Harrison, Fiona A ^a   Kuvvetli, Irfan ^b   Schindler, Stephen M ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

Author keywords

CdZnTe detectors; I V curves; Pixel detectors

Indexed keywords

CATHODES; CURRENT VOLTAGE CHARACTERISTICS; DETECTORS; ELECTRIC CONDUCTIVITY; ELECTRIC FIELD EFFECTS; IONIZATION; LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING CADMIUM COMPOUNDS;

PIXEL DETECTORS;

RADIATION DETECTORS;

EID: 0036703083     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2002.801673     Document Type: Article

References (22)

1. P.H. Mao, F.A. Harrison, Y.Y. Platonov, D. Broadway, B. DeGroot, F.E. Christensen, W.W. Craig, and C.J. Hailey, "Development of grazing incidence multilayer mirrors for hard X-ray focusing telescopes," Proc. SPIE, vol. 3114, pp. 526-534, 1997.
2. K. Tamura, K. Yamashita, H. Kunieda, Y. Tawara, A. Furuzawa, K. Haga, G.S. Lodha, N. Nakajo, N. Nakamura, T. Okajima, O. Tsuda, P.J. Serlemitos, J. Tueller, R. Petre, Y. Ogasaka, Y. Soong, and K. Chan, "Development of balloon-borne hard X-ray telescopes using multilayer supermirror," Proc. SPIE, vol. 3113, pp. 285-292, 1997.
3. W.R. Cook, J.A. Burnham, and F.A. Harrison, "Low-noise custom VLSI for CdZnTe pixel detectors," Proc. SPIE, vol. 3445, pp. 347-354, 1998.
4. W.R. Cook, S.E. Boggs, A.E. Bolotnikov, J.A. Burnham, E A. Harrison, B. Kecman, B. Matthews, S.M. Schindler, and M.J. Fitzsimmons, "First test results from a high resolution CdZnTe pixel detector with VLSI readout," Proc. SPIE, vol. 3769, pp. 92-96, 1999.
5. A.E. Bolotnikov, W.R. Cook, F.A. Harrison, A.S. Wong, S.M. Schindler, and A.C. Eichelberger, "Charge loss between contacts of CdZnTe pixel detectors," Nucl. Instrum. Methods, vol. A432, pp. 326-331, 1999.
6. T.H. Prettyman, M.K. Smith, P.N. Luke, M. Amman, and J. Lee, "Investigation of charge collection in multi-electrode CdZnTe detectors," Proc. SPIE, vol. 3768, pp. 27-36, 1999.
7. M. Amman and P.N. Luke, "Position-sensitive germanium detectors for gamma-ray imaging and spectroscopy," Proc. SPIE, vol. 4141, pp. 144-156, 2000.
8. A.E. Bolotnikov, S.E. Boggs, C.M.H. Chen, W.R. Cook, F.A. Harrison, and S.M. Schindler, "Investigation of optimal contact geometries for CdZnTe pixel detectors," Proc. SPIE, vol. 4141, pp. 243-252, 2000.
9. E. Kalemci and J.L. Matteson, "Charge splitting among anodes of a CdZnTe strip detector," Proc. SPIE, vol. 4141, pp. 235-242, 2000.
10. A.E. Bolotnikov, S.E. Boggs, C.M.H. Chen, W.R. Cook, F.A. Harrison, and S.M. Schindler, "Properties of Schottky type contacts on high-resistivity CdZnTe detectors," Nucl. Instrum. Methods, to be published.
11. S.M. Sze, D.J. Coleman, and A. Loya, "Current transport in metal-semiconductor-metal (MSM) structures," Solid-State Electron., vol. 14, pp. 1209-1215, 1971.
12. G. Cisneros and P. Mark, "Unipolar current transport through metal-insulator-metal (MIM) structures, supplied with barrier contacts, in the diffusion limit," Solid-State Electron., vol. 18, pp. 563-568, 1975.
13. C.-Y. Wu, "Interfacial layer-thermionic-diffusion theory for the Schottky-barrier diode," J. Appl. Phys., vol. 53, pp. 5947-5950, 1982.
14. 2 effectiveness as a surface passivation agent for CdZnTe crystals," Proc. SPIE, vol. 4141, pp. 324-335, 2000.
15. T.S. Lee, K.K. Choi, Y.T. Jeoung, H.K. Kim, J.M. Kim, Y.H. Kim, J.M. Chang, W.S. Song, S.U. Kim, M.J. Park, and S.D. Lee, "Surface passivation of HgCdTe by CdZnTe and its characteristics," J. Electron. Mater., vol. 26, pp. 552-555, 1997.
16. 2/Ar electron cyclone resonance plasmas," J. Electron. Mater., vol. 26, pp. 542-551, 1997.
17. T.H. Prettyman, M.A. Hoffbauer, J. Rennie, S. Cook, J. Gregory, M. George, P.N. Luke, M. Amman, S. Soldner, and J. Earnhart, "Performance of CdZnTe detectors passivated with energetic oxygen atoms," Nucl. Instrum. Methods, vol. A422, pp. 179-184, 1999.
18. H.C. Montgomery, "Electrical properties of surface layer on CdTe crystals," Solid-State Electron., vol. 7, pp. 147-152, 1964.
19. C.W. Wilmsen, Ed., Physics and Chemistry of III-V Compound Semi-conductor Interfaces. New York: Plenum, 1985.
20. M.A. Lampert and P. Mark, Current Injection in Solids. New York and London: Academic, 1970.
21. N. Krsmanovic, K.G. Lynn, M.H. Weber, R. Tjossem, S.A. Awadalla, Cs. Szeles, J.P. Flint, and H.L. Glass, "Electrical compensation in CdTe and CdZnTe by intrinsic defects," Proc. SPIE, vol. 4141, pp. 219-225, 2000.
22. P.N. Luke, M. Amman, J.S. Lee, and P.F. Manfredi, "Noise in CdZnTe detectors," IEEE Trans. Nucl. Sci., vol. 48, pp. 282-286, 2001.