Electrical compensation in CdTe and CdZnTe by intrinsic defects

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4141, Issue , 2000, Pages 219-225

  Krsmanovic, N ^a   Lynn, K G ^a   Weber, M H ^a   Tjossem, R ^a   Awadalla, S A ^a   Szeles, Cs ^a   Flint, J P ^a   Glass, H L ^a  

^a WASHINGTON STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); ELECTRON TRANSPORT PROPERTIES; SPECTROSCOPIC ANALYSIS; THERMOELECTRICITY;

ELECTRICAL COMPENSATION; INTRINSIC DEFECTS;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0034427406     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.407584     Document Type: Conference Paper

References (18)