Molecular-beam epitaxy of ZnxBe1-xSe layers on vicinal Si(0 0 1) substrates

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 514-517

  Chauvet, C ^a   Guenaud C ^a   Vennegues P ^a   Tournie E ^a   Faurie, J P ^a  

^a Cent de Recherche sur   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ENERGY GAP; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SELENIUM; SEMICONDUCTING SILICON; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; TERNARY SYSTEMS;

MIGRATION-ENHANCED-EPITAXY (MEE);

MOLECULAR BEAM EPITAXY;

EID: 0342318139     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01390-6     Document Type: Article

References (14)

1. Waag A., Fischer F., Schull K., Baron T., Lugauer H.J., Litz Th., Zehnder U., Ossau W., Gerhard T., Keim M., Reuscher G., Landwerh G. Appl. Phys. Lett. 70:1997;280.
2. Vèrié C. Gil B., Aulombard R.L. Semiconductors Heteroepitaxy. 1995;73 World Scientific, Singapore.
3. Zhou X., Jiang S., Kirk W.P. J. Crystal Growth. 175/176:1997;62.
4. Waag A., Fischer F., Lugauer H.J., Litz Th., Laubender J., Lunz U., Ossau W., Gerhard T., Moller M., Landwerh G. J. Appl. Phys. 80:1996;792.
5. Faurie J.P., Bousquet V., Brunet P., Tournié E. J. Crystal Growth. 184/185:1998;11.
6. Romano L.I., Bringans R.D., Zhou X., Kirk W.P. Phys. Rev. B. 52:1995;11201.
7. Bringans R.D., Biegelsen D.K., Swartz L.E., Ponce F.A., Tramontana J.C. Phys. Rev. B. 45:1992;13400.
8. Zhou X., Jiang S., Kirk W.P. J. Appl. Phys. 82:1997;2251.
9. Fischer R., Morkoc H., Neuman D.A., Zabel H., Choi C., Otsuka N., Longerbone M., Erickson L.P. J. Appl. Phys. 60:1990;1640.
10. Kern W., Puotinen D.A. RCA Rev. 31:1972;187.
11. Chauvet C., Vennéguès P., Tournié E., Faurie J.P. Appl. Phys. Lett. 73:1998;957.
12. Zachariasen W.Z. Z. Phys. Chem. 119:1926;210.
13. Zachariasen W.Z. Z. Phys. Chem. 124:1926;277.
14. Zachariasen W.Z. Z. Phys. Chem. 124:1926;440.