A 128-kb FeRAM macro for contact/contactless smart-card microcontrollers

IEEE Journal of Solid-State Circuits

Volumn 37, Issue 8, 2002, Pages 1073-1079

  Yamada, Junichi ^a,b   Miwa, Tohru ^a,b   Koike, Hiroki ^a,b   Toyoshima, Hideo ^a,b   Amanuma, Kazushi ^a,b   Kobayashi, Sola ^a,b   Tatsumi, Toru ^a,b   Maejima, Yukihiko ^a,b   Hada, Hiromitsu ^a,b   Mori, Hidemitsu ^a,b   Takahashi, Seiichi ^a,b   Takeuchi, Hidenori ^a,b   Kunio, Takemitsu ^a,b  

^a IEEE   (Japan)

^b NEC CORPORATION   (Japan)

Author keywords

CMVP memory cell; Embedded memory; Ferroelectric memory; Smart card microcontroller

Indexed keywords

CAPACITOR-ON-METAL VIA-STACKED-PLUG PROCESS; FERROELECTRIC RANDOM ACCESS MEMORY;

CMOS INTEGRATED CIRCUITS; ELECTRIC POWER SUPPLIES TO APPARATUS; FERROELECTRIC DEVICES; INTEGRATED CIRCUIT MANUFACTURE; LSI CIRCUITS; MICROCONTROLLERS; SMART CARDS; VOLTAGE REGULATORS;

RANDOM ACCESS STORAGE;

EID: 0036684705     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2002.800930     Document Type: Article

References (8)

1. A 256-kb nonvolatile ferroelectric memory at 3 V and 100 ns
2. A 60 ns 1 Mb nonvolatile ferroelectric memory with nondriven cell plate line write/read scheme
3. A 3.3-V 4-Mb nonvolatile ferroelectric RAM with a selectively-driven double-pulsed plate read/write-back scheme
4. Integration technology of ferroelectrics and the performance of the integrated ferroelectrics
5. Advanced 0.5-μm FRAM device technology with full compatibility of half-micron CMOS logic device
6. An embedded FeRAM macro cell for a smart-card microcontroller
7. Capacitor-on-metal/via-stacked-plug (CMVP) memory cell for 0.25 μm CMOS embedded FeRAM
8. 0.25-μm FeRAM with CMVP (capcitor-on-metal/via-stacked-plug) memory cell