DC drift activation energy of LiNbO 3 optical modulators based on thousands of hours of active accelerated aging tests

IEEE Photonics Technology Letters

Volumn 14, Issue 8, 2002, Pages 1076-1078

  Nagata, Hirotoshi ^a,b   Li, Yagang ^b   Croston, Ian ^b   Maack, David R ^a,b   Appleyard, Andy ^b  

^a IEEE   (United Kingdom)

^b JDS UNIPHASE   (United States)

Author keywords

Activation energy; dc drift; LiNbO 3 modulator

Indexed keywords

BIAS VOLTAGES;

ACTIVATION ENERGY; DATA REDUCTION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; LITHIUM NIOBATE;

LIGHT MODULATORS;

EID: 0036684560     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2002.1021974     Document Type: Article

References (13)

1. 3 optical modulators assured over 15 years
2. 3 bias stability
3. 3 Modulator
4. 3 integrated optic devices
5. 3 optical intensity modulators
6. 3 modulator dc drift
7. 3 modulators without oxide buffer layer
8. Dc drift failure rate estimated on 10 Gb/s x-cut lithium niobate modulators
9. What integrated optics is really used for
10. A review of lithium niobate modulators for fiber-optic communications systems
11. Reliability of lithium niobate Mach Zehnder modulators for digital optical fiber telecommunication systems