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Volumn 63, Issue 1-3, 2002, Pages 293-299
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Molecular beam epitaxy growth mechanism and wire width control for formation of dense networks of narrow InGaAs quantum wires
a
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Author keywords
Patterned InP substrate; Ridge quantum wire; Selective MBE; Wire width
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
CRYSTAL ORIENTATION;
MOLECULAR BEAM EPITAXY;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SEMICONDUCTOR GROWTH;
SUBSTRATES;
TRANSMISSION ELECTRON MICROSCOPY;
SELECTIVE EPITAXIAL GROWTH;
SEMICONDUCTOR QUANTUM WIRES;
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EID: 0036679832
PISSN: 01679317
EISSN: None
Source Type: Journal
DOI: 10.1016/S0167-9317(02)00646-9 Document Type: Conference Paper |
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Times cited : (2)
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References (9)
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