Vertical barrier layer formation during selective MBE growth of InGaAs ridge quantum wires on InP patterned substrates

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 7, Issue 3, 2000, Pages 902-906

  Jiang, C ^a   Fujikura, H ^a   Hasegawa, H ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY DISPERSIVE SPECTROSCOPY; FREE ENERGY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

INDIUM ALUMINUM ARSENIDE; VERTICAL BARRIER LAYER;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0033688937     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(00)00085-0     Document Type: Article

References (9)

1. Hasegawa H., Fujikura H., Okada H. MRS Bull. 24(8):1999;25.
2. Okada H., Fujikura H., Hashizume T., Hasegawa H. Jpn. J. Appl. Phys. 36:1997;1672.
3. Fujikura H., Hanada Y., Kihara M., Hasegawa H. Jpn. J. Appl. Phys. 37:1998;1532.
4. Nishida T., Sugiura H., Notomi M., Tamamura T. J. Crystal Growth. 132:1993;91.
5. Sugaya T., Nakagawa T., Sugiyama Y. IEICE Trans. Electron. E79-C:1996;1568.
6. Fujikura H., Hasegawa H. J. Crystal Growth. 150:1995;327.
7. Shen X.Q., Kishimoto D., Nishinaga T. Jpn. J. Appl. Phys. 33:1994;11.
8. Biasiol G., Kapon E. Phys. Rev. Lett. 81:1998;2962.
9. Arent D.J., Nilsson S., Galeuchet Y.D., Meier H.P., Walter W. Appl. Phys. Lett. 55:1989;2611.