Influence of dielectric deposition parameters on the In 0.2Ga 0.8As/GaAs quantum well intermixing by impurity-free vacancy disordering

Journal of Applied Physics

Volumn 92, Issue 3, 2002, Pages 1386-1390

  Yu, Jae Su ^a   Song, Jin Dong ^a   Lee, Yong Tak ^a   Lim, H ^b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Ajou University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP ENERGY; BLUE SHIFT; CAPPING LAYER; DEPOSITION PARAMETERS; DEPOSITION PRESSURES; DEPOSITION TEMPERATURES; DIELECTRIC CAPPING LAYERS; DIELECTRIC DEPOSITION; IMPURITY FREE VACANCY DISORDERING; PEAK ENERGY; QUANTUM WELL INTERMIXING; RF-POWER;

CHEMICAL VAPOR DEPOSITION; GALLIUM; INDIUM; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING; SILICON NITRIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036677375     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1486027     Document Type: Article

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