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Volumn 3897, Issue , 1999, Pages 605-613
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pH sensitivity and hysteresis of A-WO3 gate ISFET compared with different membranes
a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHOUS SILICON;
CURRENT VOLTAGE CHARACTERISTICS;
HYDROGENATION;
HYSTERESIS;
MEMBRANES;
PH EFFECTS;
TANTALUM COMPOUNDS;
TUNGSTEN COMPOUNDS;
ION SENSITIVE FIELD EFFECT TRANSISTORS (ISFET);
TANTALUM OXIDE;
TUNGSTEN OXIDE;
GATES (TRANSISTOR);
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EID: 0033351474
PISSN: 0277786X
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (3)
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References (20)
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