Hysteresis and drift effect of hydrogenated amorphous silicon for ISFET

Sensors and Actuators, B: Chemical

Volumn 66, Issue 1, 2000, Pages 181-183

  Chou, Jung Chuan ^a   Hsiao, Ching Nan ^a  

^a NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; HYSTERESIS; ION SENSITIVE FIELD EFFECT TRANSISTORS; PH; SILICON SENSORS;

DRIFT EFFECT;

CHEMICAL SENSORS;

EID: 0033718096     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(00)00341-5     Document Type: Article

References (6)

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3. 4 pH response using RTP techniques. Sens. Mater. 9(1):1997;15-23.
4. 4 pH-sensing insulators. Sens. Actuators, B. 17:1994;157-164.
5. Yule Z., Shouan Z., Tao L. Drift characteristics of pH-ISFET output. Chin. J. Semicond. 15(12):1994;838-843.
6. Bosse L., Bergveld P. The role of buried OH sites in the response mechanism of inorganic-gate pH-sensitive ISFETs. Sens. Actuators. 6:1984;65-78.