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Volumn 192, Issue 2, 2002, Pages 453-455

Effect of In-doping on the properties of as-grown p-type GaN grown by metalorganic vapour phase epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; HALL EFFECT; HOLE MOBILITY; METALLORGANIC VAPOR PHASE EPITAXY; RAPID THERMAL ANNEALING; SEMICONDUCTING INDIUM; SEMICONDUCTOR DOPING; STRAIN; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

EID: 0036670142     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200208)192:2<453::AID-PSSA453>3.0.CO;2-I     Document Type: Conference Paper
Times cited : (5)

References (7)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.