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Volumn 192, Issue 2, 2002, Pages 453-455
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Effect of In-doping on the properties of as-grown p-type GaN grown by metalorganic vapour phase epitaxy
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Author keywords
[No Author keywords available]
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Indexed keywords
CARRIER CONCENTRATION;
HALL EFFECT;
HOLE MOBILITY;
METALLORGANIC VAPOR PHASE EPITAXY;
RAPID THERMAL ANNEALING;
SEMICONDUCTING INDIUM;
SEMICONDUCTOR DOPING;
STRAIN;
THERMAL EFFECTS;
X RAY DIFFRACTION ANALYSIS;
HOLE CONCENTRATION;
GALLIUM NITRIDE;
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EID: 0036670142
PISSN: 00318965
EISSN: None
Source Type: Journal
DOI: 10.1002/1521-396X(200208)192:2<453::AID-PSSA453>3.0.CO;2-I Document Type: Conference Paper |
Times cited : (5)
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References (7)
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