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Volumn 17, Issue 7, 2002, Pages 735-739

Influence of processing parameters on the transport properties of quantum point contacts fabricated with an atomic force microscope

(5) Apetrii, G a Fischer, S F a Kunze, U a Reuter, D a Wieck, A D a

a RUHR UNIVERSITY BOCHUM (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC CONDUCTANCE; ELECTRON GAS; ETCHING; HETEROJUNCTIONS; LITHOGRAPHY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SURFACES; THRESHOLD VOLTAGE; TRANSPORT PROPERTIES;

ATOMIC FORCE MICROSCOPE; CONDUCTANCE CHARACTERISTICS; QUANTUM POINT CONTACTS; TWO DIMENSIONAL ELECTRON GAS; WET CHEMICAL ETCHING;

QUANTUM ELECTRONICS;

EID: 0036646008 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/17/7/317 Document Type: Article

Times cited : (25)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.