Validation of strong magnetic field asymptotic models for dopant transport during semiconductor crystal growth

Journal of Crystal Growth

Volumn 180, Issue 3-4, 1997, Pages 401-409

  Ma, N ^a   Walker, J S ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETIC FIELD EFFECTS; MATHEMATICAL MODELS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

ASYMPTOTIC MODEL; HARTMANN NUMBER; PECLET NUMBER;

CRYSTAL GROWTH FROM MELT;

EID: 0031248125     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00236-4     Document Type: Article

References (5)

1. D.H. Kim, P.M. Adornato, R.A. Brown, J. Crystal Growth 89 (1988) 339.
2. N. Ma, J.S. Walker, J. Crystal Growth 172 (1997) 124.
3. R.W. Series, D.T.J. Hurle, J. Crystal Growth 133 (1991) 305.
4. T. Alboussière, Magnétohydrodynamique et ségrégation solutale en croissance Bridgman horizontal, Doctoral Thesis, Institut National Polytechnique de Grenoble, 1992.
5. L.N. Hjellming, J.S. Walker, J. Fluid Mech. 182 (1987) 335.