Resonant self-organization in semiconductor growth

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 516-523

  Temmyo, Jiro ^a   Kuramochi, Eiichi ^a   Kamada, Hidehiko ^b   Tamamura, Toshiaki ^a  

^a NTT CORPORATION   (Japan)

^b NTT Basic Research Laboratories   (Japan)

Author keywords

GaAs (3 1 1)B; Nanostructures; Nonequilibrium system; Resonant self organization; Self organized disk; Turing instability

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; NANOSTRUCTURED MATERIALS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

RESONANT SELF-ORGANIZATION; SELECTIVE EPITAXY; TURING SELF ORGANIZATION;

SEMICONDUCTOR GROWTH;

EID: 0032477136     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00664-2     Document Type: Article

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