Sputter and diffusion processes in a plasma immersion device

Surface and Coatings Technology

Volumn 93, Issue 2-3, 1997, Pages 213-216

  Bender, H ^a   Halder, J ^a   Hilschert, F ^a   Klein, H ^a   Schafer J ^a   Seiler, B ^a   Thomae, R ^a  

^a GOETHE UNIVERSITY   (Germany)

Author keywords

Diffusion; Dose limitation; Plasma immersion ion implantation; Sputtering; Vapor deposition

Indexed keywords

ARGON; DIFFUSION IN SOLIDS; ION SOURCES; OXYGEN; PLASMA DEVICES; SEMICONDUCTING SILICON; SPUTTER DEPOSITION; SURFACE TREATMENT; VAPOR DEPOSITION;

DOSE LIMITATION; PLASMA IMMERSION ION IMPLANTATION (PIII);

ION IMPLANTATION;

EID: 0031220087     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(97)00047-9     Document Type: Article

References (6)

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