SCOPUS 정보 검색 플랫폼

Semiconductor Science and Technology

Volumn 17, Issue 7, 2002, Pages 682-685

Characterization of deep defects in CdxHg1-xTe by injection-level spectroscopy of carrier lifetime

(2) Gnatyuk, V A a Karazhanov, S Zh b

a INTERREGIONAL ACADEMY OF PERSONNEL MANAGEMENT (Ukraine)

b Physical Technical Institute Uzbekistan (Uzbekistan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CHARGE CARRIERS; CRYSTAL DEFECTS; ELECTRON ENERGY LEVELS; HOLE TRAPS; INFRARED SPECTROSCOPY; LASER APPLICATIONS; PHOTOCONDUCTIVITY; SPECTROSCOPIC ANALYSIS;

CADMIUM MERCURY TELLURIDE; CARRIER LIFETIME; DEEP DEFECTS;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0036641265 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/17/7/308 Document Type: Article

Times cited : (1)

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