Effect of plasma and thermal annealing on optical and electronic properties of SnO 2 substrates used for a-Si solar cells

Journal of Applied Physics

Volumn 92, Issue 1, 2002, Pages 620-626

  Hegedus, Steven S ^a  

^a UNIVERSITY OF DELAWARE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION LOSS; ANNEALING TREATMENTS; HALL EFFECT MEASUREMENT; LOW CARRIER DENSITY; OPTICAL AND ELECTRONIC PROPERTIES; PLASMA-INDUCED DAMAGE; SOLAR MODULE; SUBSTRATE MATERIAL; SUPERSTRATES; THERMAL-ANNEALING; ZNO; ZNO LAYERS;

ANNEALING; CARRIER CONCENTRATION; ELECTRONIC PROPERTIES; GRAIN BOUNDARIES; PLASMAS; SILICON; SUBSTRATES; THERMAL DESORPTION; ZINC OXIDE;

PLASMA DIAGNOSTICS;

EID: 0036640492     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1481192     Document Type: Article

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