Mechanism of carrier accumulation at the hetero interface between InSb and GaAs

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 2 B, 1999, Pages 1107-1110

  Tanaka, Takeshi ^a   Washima, Mineo ^a   Sakaguchi, Harunori ^a  

^a HITACHI CABLE LTD   (Japan)

Author keywords

Carrier accumulation; Dangling bond; InSb; Interface carrier; Surface orientation

Indexed keywords

CARRIER CONCENTRATION; GEOMETRY; HETEROJUNCTIONS; INTERFACES (MATERIALS); SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS;

CARRIER ACCUMULATION; DANGLING BOND DENSITY; HETERO EPITAXIAL INTERFACE; INTERFACE CARRIER; SURFACE INDEX; SURFACE ORIENTATION; VAN DER PAUW GEOMETRY; ZINC BLENDE STRUCTURE;

CARRIER MOBILITY;

EID: 0032625287     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.1107     Document Type: Article

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