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Volumn 184-185, Issue , 1998, Pages 1232-1236

Iodine and arsenic doping of (100)HgCdTe/GaAs grown by metalorganic vapor phase epitaxy using isopropyl iodide and tris-dimethylaminoarsenic

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EID: 0000187823     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0022-0248(98)80258-3     Document Type: Article
Times cited : (7)

References (7)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.