Lateral smart-discrete process and devices based on thin-layer silicon-on-insulator

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2001, Pages 407-410

  Letavic, T ^a   Petruzzello, J ^a   Simpson, M ^a   Curcio, J ^a   Mukherjee, S ^a   Davidson, J ^a   Peake, S ^a   Rogers, C ^a   Rutter, P ^a   Warwick, M ^a   Grover, R ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; ELECTRIC CHARGE; GATES (TRANSISTOR); MASKS; MOS DEVICES; SEMICONDUCTOR DIODES; SUBSTRATES; SWITCHING CIRCUITS; THIN FILMS;

ULTRAFAST SILICON DIODES;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0034829338     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. Bipolar-MOS monolithic cascode switch in VIPower technology
2. Plugging the global power leak
3. Improvement in lateral IGBT design for 500V 3Aone chip inverter ICs
4. 600V power conversion system-on-a-chip based on thin-layer SOI
5. CoolMOS, a new milestone in high-voltage power MOS
6. Mdmesh: Innovative technology for high-voltage Power MOSFETS