The graded doped trench MOS Barrier Schottky rectifier: A low forward drop high voltage rectifier

Solid-State Electronics

Volumn 43, Issue 1, 1999, Pages 1-9

  Mahalingam, Srikanth ^a   Baliga, B Jayant ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001769693     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00250-0     Document Type: Article

References (11)

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4. Mehrotra M, Baliga BJ. IEEE Trans Electron Devices 1994;41:1655.
5. Kozaka H, Takata M, Murakami S, Yasuto T. Proc Int Symp on Power Semicond Devices and ICs 80, 1992.
6. Kunori S, Ishida J, Tanaka M, Wakatabe, M, Kan T. Proc Int Symp on Power Semicond Devices and ICs 80, 1992.
7. Mehrotra M, Baliga BJ. Solid-State Electron 1995;38:801.
8. Medici Version 2.2, Technology Modeling Associates, 1996.
9. Ghandhi SK. VLSI Fabrication Principles, 2nd ed. Wiley Interscience, 1994.
10. Motorola, Rectifier Device Data, Rev2, 1995, pp. 3-90.
11. International Rectifier, Schottky Diode Designer's Manual SDM-1, 1992, E5.