Drift mobility and photoluminescence measurements on high resistivity Cd1-xZnxTe crystals grown from Te-rich solution

Journal of Electronic Materials

Volumn 25, Issue 8, 1996, Pages 1241-1246

  Suzuki, K ^a   Seto, S ^b   Dairaku, S ^c   Takojima, N ^a   Sawada, T ^a   Imai, K ^a  

^a HOKKAIDO INSTITUTE OF TECHNOLOGY   (Japan)

^b ISHIKAWA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^c SUMITOMO METAL MINING CO LTD   (Japan)

Author keywords

Alloy scattering; Cd1 xZnxTe; Drift mobility; Photoluminescence (PL); Solution growth; Time of flight (TOF)

Indexed keywords

EID: 0001361375     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02655014     Document Type: Article

References (12)

1. S.B. Qadri, E.F. Skelton, A.W. Webb and J. Kennedy, Appl. Phys. Lett. 46, 257 (1985).
2. J.F. Butler, C.L. Lingren and F.P. Doty, IEEE NS 39, 605 (1992).
3. Z. Burshtein, H.N. Jayatirtha, A. Burger, J.F. Butler, B. Apotovsky and F.P. Doty, Appl. Phys. Lett. 63, 102 (1993).
4. D. Chattopadhyay, Solid State Commun. 91, 149 (1994).
5. P. Siffert, MRS Symp. Proc. vol. 16 (Pittsburgh, PA: Mater. Res. Soc., 1982), p. 87.
6. K. Suzuki, S. Seto, A. Tanaka and M. Kawashima, J. Cryst. Growth 101, 859 (1990).
7. R.O. Bell, F.V. Wald, C. Canali, F. Nava and G. Ottaviani, IEEE Trans. Nucl. Sci. NS-21, 331 (1974).
8. See, for example, S.M. Sze, Physics of Semiconductor Devices 2nd ed. (New York: John Wiley & Sons, 1981).
9. D. Kranzer, J. Phys. C 6, 2979 (1973).
10. M. Costato, C. Jacoboni and L. Reggiani, Phys. Stat. Sol. (b) 52, 461 (1972).
11. H. Mathieu, J. Allegre, A. Chatt, P. Lefebvre and J.P. Faurie, Phys. Rev. 538, 7740 (1988).
12. K. Zanio, Semiconductors and Semimetals (New York: Academic Press, 1978), Vol. 13, p 103.