Transport properties of undoped Cd0.9Zn0.1Te grown by high pressure Bridgman technique

Journal of Electronic Materials

Volumn 29, Issue 6, 2000, Pages 704-707

  Suzuki, Kazuhiko ^a   Seto, S ^b   Iwata, A ^a   Bingo, M ^a   Sawada, T ^a   Imai, K ^a  

^a HOKKAIDO INSTITUTE OF TECHNOLOGY   (Japan)

^b ISHIKAWA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM ALLOYS; CARRIER MOBILITY; CHARGE CARRIERS; ELECTRON TRANSPORT PROPERTIES; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

CADMIUM ZINC TELLURIDE; HIGH PRESSURE BRIDGMAN METHOD;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0033700742     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0209-y     Document Type: Article

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