Micro-Raman investigation of the n-dopant distribution in lateral epitaxial overgrown GaN/Sapphire (0001)

Journal of Electronic Materials

Volumn 31, Issue 6, 2002, Pages 631-634

  Chaldyshev, V V ^a   Pollak, Fred H ^a,b   Pophristic, M ^c   Gou, S P ^c   Ferguson, I ^c,d  

^a CITY UNIVERSITY OF NEW YORK   (United States)

^b CITY UNIVERSITY OF NEW YORK   (United States)

^c EMCORE CORPORATION   (United States)

^d GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

GaN; Micro Raman spectroscopy; Sapphire (0001)

Indexed keywords

BACKSCATTERING; EPITAXIAL GROWTH; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SAPPHIRE; THERMAL CONDUCTIVITY OF SOLIDS;

DOPANT DISTRIBUTION; LATERAL EPITAXIAL OVERGROWTH;

GALLIUM NITRIDE;

EID: 0036611183     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-002-0134-3     Document Type: Article

References (15)