Electrical breakdown of amorphous hydrogenated silicon rich silicon nitride thin film diodes

IEEE Transactions on Electron Devices

Volumn 43, Issue 9, 1996, Pages 1592-1601

  Bijlsma, Sipke J ^a,b   Van Kranenburg, Henna ^a   Nieuwesteeg, K J B M ^a   Pitt, Michael G ^a   Verweij, Jan F ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

^b Plat Panel Display Co   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; COMPUTER SIMULATION; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENTS; ELECTRIC VARIABLES MEASUREMENT; ELECTRODES; LIQUID CRYSTAL DISPLAYS; OHMIC CONTACTS; SEMICONDUCTOR DIODES; SILICON NITRIDE; STATISTICAL METHODS; THERMAL VARIABLES MEASUREMENT;

AMORPHOUS HYDROGENERATED SILICON RICH SILICON NITRIDE; HYDROGEN EFFUSION; METAL ELECTRODES;

THIN FILM DEVICES;

EID: 0030243032     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.535353     Document Type: Article

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