An effective potential method for including quantum effects into the simulation of ultra-short and ultra-narrow channel MOSFETs

2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001

Volumn , Issue , 2001, Pages 550-553

  Akis, Richard ^a   Milicic, Srdjan N ^a   Ferry, David K ^a   Vasileska, Dragica ^a  

^a Arizona State University   (United States)

Author keywords

Monte Carlo simulation; Quantization; SOI devices; Ultra small MOSFETs

Indexed keywords

APPROXIMATION THEORY; CARRIER CONCENTRATION; COMPUTER SIMULATION; EIGENVALUES AND EIGENFUNCTIONS; ELECTRON TRANSITIONS; INTEGRAL EQUATIONS; MONTE CARLO METHODS; POISSON EQUATION; QUANTUM THEORY; SILICON ON INSULATOR TECHNOLOGY;

QUANTIZATION; SILICON ON INSULATOR (SOI) DEVICES; SPACE-QUANTIZATION EFFECTS; ULTRA-SMALL MOSFETS;

MOSFET DEVICES;

EID: 0009735879     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. D. Vasileska and D. K. Ferry, IEEE Trans. Electron Devices 44, 577 (1997).
2. D. Vasileska, D. K. Schroder and D.K. Ferry, IEEE Trans. Electron Devices 44, 584 (1997).
3. SCHRED Stands for 1D Schrödinger-Poisson solver. The tool was developed at ASU and extended at Purdue University. It currently resides on PUNCH: http://punch. ecn.purdue.edu/.
4. H. Majima, H. Ishikuro, T. Hiramoto, IEEE Electron Device Letters 21, 396 (2000).
5. D. K. Ferry, Superlatt. Microstructures 27, 61 (2000).
6. A. Abramo, A. Cardin, L. Selmi, and E. Sangiorgi, IEEE Trans. Electron Devices 47, 1858 (2000).