Feasibility of an Ag-alloy film as a thin-film transistor liquid-crystal display source/drain material

Journal of Electronic Materials

Volumn 31, Issue 6, 2002, Pages 610-614

  Jeong, C O ^a   Roh, N S ^a   Kim, S G ^a   Park, H S ^a   Kim, C W ^a   Sakong, D S ^a   Seok, J H ^a   Chung, K H ^a   Lee, W H ^b   Gan, Dongwen ^c   Ho, Paul S ^c   Cho, B S ^d   Kang, B J ^d   Yang, H J ^d   Ko, Y K ^d  

^a SAMSUNG Electronics   (South Korea)

^b Sejong University   (South Korea)

^c The University of Texas at Austin   (United States)

^d Kookmin University   (South Korea)

Author keywords

Ag alloy; Liquid crystal display; Magnetron sputtering; Metallization; Thin film transistor

Indexed keywords

AGGLOMERATION; AMORPHOUS SILICON; ANNEALING; COPPER; ELECTRIC CONDUCTIVITY; LIQUID CRYSTAL DISPLAYS; MAGNETRON SPUTTERING; METALLIZING; PALLADIUM; THIN FILM TRANSISTORS;

ALUMINUM NEODYMIUM; CONTACT CHARACTERISTICS; DIFFUSION BARRIER; GATE ELECTRODE;

SILVER ALLOYS;

EID: 0036609839     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-002-0132-5     Document Type: Article

References (19)