Growth of δ-doped SiC epitaxial layers

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 563-566

  Karlsson, S ^a   Adas C ^b   Konstantinov, A ^a   Linnarsson, M K ^c  

^a ACREO AB   (Sweden)

^b ERICSSON RESEARCH   (Sweden)

^c ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; ION BEAMS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; THERMAL EFFECTS; VAPOR PHASE EPITAXY;

CAPACITANCE VOLTAGE MEASUREMENT; DELTA DOPING; EPITAXIAL LAYERS; FULL WIDTH HALF MAXIMUM;

SILICON CARBIDE;

EID: 4243850727     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.563     Document Type: Article

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